Technical Specifications of RJP4301APP-M0#T2
| Datasheet |  RJP4301APP-M0#T2 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | Renesas Electronics America |
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| Series | - |
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| Packaging | Tube |
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| IGBT Type | - |
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| Voltage - Collector Emitter Breakdown (Max) | 430V |
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| Current - Collector (Ic) (Max) | - |
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| Current - Collector Pulsed (Icm) | 200A |
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| Vce(on) (Max) @ Vge, Ic | 10V @ 26V, 200A |
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| Power - Max | 30W |
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| Switching Energy | - |
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| Input Type | Standard |
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| Gate Charge | - |
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| Td (on/off) @ 25°C | 50ns/100ns |
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| Test Condition | 300V, 200A, 30 Ohm, 26V |
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| Reverse Recovery Time (trr) | - |
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| Package / Case | TO-220-3 Full Pack |
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| Mounting Type | Through Hole |
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| Supplier Device Package | TO-220FL |
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