Technical Specifications of CSD19532KTT
Datasheet | CSD19532KTT datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Texas Instruments |
Series | NexFET? |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 200A (Ta) |
Rds On (Max) @ Id, Vgs | 5.6 mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id | 3.2V @ 250μA |
Gate Charge (Qg) @ Vgs | 57nC @ 10V |
Input Capacitance (Ciss) @ Vds | 5060pF @ 50V |
Power - Max | 250W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | * |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | DDPAK/TO-263-3 |
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