Technical Specifications of 1N5817-E3/53
| Datasheet |  1N5817-E3/53 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Diodes - Rectifiers - Single |
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| Manufacturer | Vishay Semiconductor Diodes Division |
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| Series | - |
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| Packaging | Tape & Box (TB) |
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| Diode Type | Schottky |
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| Voltage - DC Reverse (Vr) (Max) | 20V |
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| Current - Average Rectified (Io) | 1A |
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| Voltage - Forward (Vf) (Max) @ If | 750mV @ 3.1V |
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| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
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| Reverse Recovery Time (trr) | - |
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| Current - Reverse Leakage @ Vr | 1mA @ 20V |
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| Capacitance @ Vr, F | 125pF @ 4V, 1MHz |
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| Mounting Type | Through Hole |
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| Package / Case | DO-204AL, DO-41, Axial |
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| Supplier Device Package | DO-204AL (DO-41) |
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| Operating Temperature - Junction | -65°C ~ 125°C |
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