Technical Specifications of FJP5027O
| Datasheet |  FJP5027O datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Fairchild Semiconductor |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 3A |
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| Voltage - Collector Emitter Breakdown (Max) | 800V |
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| Vce Saturation (Max) @ Ib, Ic | 2V @ 300mA, 1.5A |
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| Current - Collector Cutoff (Max) | 10μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 200mA, 5V |
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| Power - Max | 50W |
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| Frequency - Transition | 15MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-220-3 |
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| Supplier Device Package | TO-220-3 |
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