Technical Specifications of SUP50N03-5M1P-GE3
Datasheet | SUP50N03-5M1P-GE3 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Vishay Siliconix |
Series | TrenchFET? |
Packaging | Bulk |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Rds On (Max) @ Id, Vgs | 5.1 mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Gate Charge (Qg) @ Vgs | 66nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2780pF @ 15V |
Power - Max | 2.7W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
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