Technical Specifications of APTM100H35FT3G
| Datasheet |  APTM100H35FT3G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Arrays |
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| Manufacturer | Microsemi Corporation |
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| Series | - |
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| Packaging | Bulk |
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| FET Type | 4 N-Channel (H-Bridge) |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 1000V (1kV) |
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| Current - Continuous Drain (Id) @ 25°C | 22A |
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| Rds On (Max) @ Id, Vgs | 420 mOhm @ 11A, 10V |
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| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
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| Gate Charge (Qg) @ Vgs | 186nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 5200pF @ 25V |
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| Power - Max | 390W |
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| Operating Temperature | -40°C ~ 150°C (TJ) |
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| Mounting Type | Chassis Mount |
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| Package / Case | SP3 |
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| Supplier Device Package | SP3 |
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