Technical Specifications of 2SK536-TB-E
| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | SANYO Semiconductor (U.S.A) Corporation |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 50V |
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| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
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| Rds On (Max) @ Id, Vgs | 20 Ohm @ 10mA, 10V |
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| Vgs(th) (Max) @ Id | - |
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| Gate Charge (Qg) @ Vgs | - |
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| Input Capacitance (Ciss) @ Vds | 15pF @ 10V |
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| Power - Max | 200mW |
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| Operating Temperature | 125°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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| Supplier Device Package | 3-CP |
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