Technical Specifications of BSS816NW L6327
| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Infineon Technologies |
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| Series | OptiMOS? |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Logic Level Gate, 1.8V Drive |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
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| Rds On (Max) @ Id, Vgs | 160 mOhm @ 1.4A, 2.5V |
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| Vgs(th) (Max) @ Id | 750mV @ 3.7μA |
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| Gate Charge (Qg) @ Vgs | 0.6nC @ 2.5V |
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| Input Capacitance (Ciss) @ Vds | 180pF @ 10V |
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| Power - Max | 500mW |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | SC-70, SOT-323 |
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| Supplier Device Package | PG-SOT323-3 |
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