Technical Specifications of IPD031N03M G
Datasheet | IPD031N03M G datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | OptiMOS? |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Rds On (Max) @ Id, Vgs | 3.1 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250μA |
Gate Charge (Qg) @ Vgs | 51nC @ 10V |
Input Capacitance (Ciss) @ Vds | 5300pF @ 15V |
Power - Max | 94W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | PG-TO252-3 |
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