Technical Specifications of FDFMA2P859T
| Datasheet |  FDFMA2P859T datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Fairchild Semiconductor |
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| Series | PowerTrench? |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Diode (Isolated) |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
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| Rds On (Max) @ Id, Vgs | 120 mOhm @ 3A, 4.5V |
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| Vgs(th) (Max) @ Id | 1.3V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 6nC @ 4.5V |
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| Input Capacitance (Ciss) @ Vds | 435pF @ 10V |
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| Power - Max | 700mW |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 6-UDFN |
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| Supplier Device Package | MicroFET 2x2 Thin |
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