Technical Specifications of APTSM120AM08CT6AG
| Datasheet |  APTSM120AM08CT6AG datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Arrays |
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| Manufacturer | Microsemi Corporation |
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| Series | - |
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| Packaging | * |
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| FET Type | 2 N-Channel (Dual), Schottky |
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| FET Feature | Silicon Carbide (SiC) |
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| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
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| Current - Continuous Drain (Id) @ 25°C | 370A (Tc) |
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| Rds On (Max) @ Id, Vgs | 10 mOhm @ 200A, 20V |
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| Vgs(th) (Max) @ Id | 3V @ 10mA |
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| Gate Charge (Qg) @ Vgs | 1360nC @ 20V |
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| Input Capacitance (Ciss) @ Vds | * |
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| Power - Max | 2300W |
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| Operating Temperature | -40°C ~ 175°C (TJ) |
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| Mounting Type | * |
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| Package / Case | * |
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| Supplier Device Package | * |
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