Technical Specifications of 2SA1930(Q,M)
| Category | Discrete Semiconductor Products |
|---|
| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 2A |
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| Voltage - Collector Emitter Breakdown (Max) | 180V |
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| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
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| Current - Collector Cutoff (Max) | 5μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
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| Power - Max | 2W |
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| Frequency - Transition | 200MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-220-3 Full Pack |
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| Supplier Device Package | TO-220NIS |
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