Technical Specifications of ZXTDB2M832TA
| Datasheet |  ZXTDB2M832TA datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | Diodes Incorporated |
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| Series | - |
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| Packaging | Cut Tape (CT) |
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| Transistor Type | NPN, PNP |
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| Current - Collector (Ic) (Max) | 4.5A, 3.5A |
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| Voltage - Collector Emitter Breakdown (Max) | 20V |
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| Vce Saturation (Max) @ Ib, Ic | 270mV @ 125mA, 4.5A / 300mV @ 350mA, 3.5A |
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| Current - Collector Cutoff (Max) | 25nA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2A, 2V / 150 @ 2A, 2V |
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| Power - Max | 1.7W |
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| Frequency - Transition | 140MHz, 180MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-VDFN Exposed Pad |
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| Supplier Device Package | 8-MLP (3x2) |
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