Technical Specifications of IXYX100N65B3D1
| Datasheet |  IXYX100N65B3D1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | IXYS |
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| Series | GenX3?, XPT? |
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| Packaging | Tube |
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| IGBT Type | PT |
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| Voltage - Collector Emitter Breakdown (Max) | 650V |
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| Current - Collector (Ic) (Max) | 225A |
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| Current - Collector Pulsed (Icm) | 460A |
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| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 70A |
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| Power - Max | 830W |
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| Switching Energy | 1.27mJ (on), 1.37mJ (off) |
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| Input Type | Standard |
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| Gate Charge | 168nC |
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| Td (on/off) @ 25°C | 29ns/150ns |
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| Test Condition | 400V, 50A, 3 Ohm, 15V |
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| Reverse Recovery Time (trr) | 156ns |
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| Package / Case | TO-247-3 |
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| Mounting Type | Through Hole |
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| Supplier Device Package | PLUS247?-3 |
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