Technical Specifications of ULN2003APG,CN
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | 7 NPN Darlington |
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| Current - Collector (Ic) (Max) | 500mA |
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| Voltage - Collector Emitter Breakdown (Max) | 50V |
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| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500μA, 350mA |
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| Current - Collector Cutoff (Max) | - |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
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| Power - Max | 1.47W |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | 16-DIP (0.300", 7.62mm) |
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| Supplier Device Package | 16-DIP |
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