Technical Specifications of IXGX32N170AH1
| Datasheet |  IXGX32N170AH1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | IXYS |
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| Series | - |
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| Packaging | Bulk |
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| IGBT Type | NPT |
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| Voltage - Collector Emitter Breakdown (Max) | 1700V |
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| Current - Collector (Ic) (Max) | 32A |
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| Current - Collector Pulsed (Icm) | 110A |
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| Vce(on) (Max) @ Vge, Ic | 5V @ 15V, 21A |
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| Power - Max | 350W |
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| Switching Energy | 4.1mJ (on), 1.25mJ (off) |
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| Input Type | Standard |
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| Gate Charge | 157nC |
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| Td (on/off) @ 25°C | 27ns/270ns |
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| Test Condition | 850V, 32A, 2.7 Ohm, 15V |
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| Reverse Recovery Time (trr) | 150ns |
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| Package / Case | TO-247-3 |
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| Mounting Type | Through Hole |
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| Supplier Device Package | PLUS247?-3 |
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