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IPG20N10S4L35ATMA1
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
| Manufacturer Part Number | IPG20N10S4L35ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | MOSFET 2N-CH 8TDSON |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| IPG20N10S4L35ATMA1 Price |  |
Technical Specifications of IPG20N10S4L35ATMA1
| Datasheet |  IPG20N10S4L35ATMA1 datasheet |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Arrays |
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS? |
| Packaging | Tape & Reel (TR) |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 16μA |
| Gate Charge (Qg) @ Vgs | 17.4nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1105pF @ 25V |
| Power - Max | 43W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-4 (5.15x6.15) |
