Technical Specifications of IXGB200N60B3
| Datasheet |  IXGB200N60B3 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | IXYS |
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| Series | GenX3? |
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| Packaging | Tube |
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| IGBT Type | PT |
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| Voltage - Collector Emitter Breakdown (Max) | 600V |
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| Current - Collector (Ic) (Max) | 75A |
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| Current - Collector Pulsed (Icm) | 600A |
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| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 100A |
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| Power - Max | 1250W |
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| Switching Energy | 1.6mJ (on), 2.9mJ (off) |
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| Input Type | Standard |
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| Gate Charge | 750nC |
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| Td (on/off) @ 25°C | 44ns/310ns |
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| Test Condition | 300V, 100A, 1 Ohm, 15V |
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| Reverse Recovery Time (trr) | - |
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| Package / Case | TO-264-3, TO-264AA |
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| Mounting Type | Through Hole |
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| Supplier Device Package | PLUS264? |
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