Technical Specifications of PHD18NQ10T,118
| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | NXP Semiconductors |
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| Series | TrenchMOS? |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 100V |
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| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
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| Rds On (Max) @ Id, Vgs | 90 mOhm @ 9A, 10V |
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| Vgs(th) (Max) @ Id | 4V @ 1mA |
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| Gate Charge (Qg) @ Vgs | 21nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 633pF @ 25V |
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| Power - Max | 79W |
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| Operating Temperature | -55°C ~ 175°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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| Supplier Device Package | DPAK |
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