Technical Specifications of BSG0810NDIATMA1
| Datasheet |  BSG0810NDIATMA1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Arrays |
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| Manufacturer | Infineon Technologies |
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| Series | OptiMOS? |
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| Packaging | Tape & Reel (TR) |
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| FET Type | 2 N-Channel (Dual) Asymmetrical |
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| FET Feature | Logic Level Gate, 4.5V Drive |
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| Drain to Source Voltage (Vdss) | 25V |
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| Current - Continuous Drain (Id) @ 25°C | 19A, 39A |
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| Rds On (Max) @ Id, Vgs | 3 mOhm @ 20A, 10V |
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| Vgs(th) (Max) @ Id | 2V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 8.4nC @ 4.5V |
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| Input Capacitance (Ciss) @ Vds | 1040pF @ 12V |
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| Power - Max | 2.5W |
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| Operating Temperature | -55°C ~ 155°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-PowerTDFN |
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| Supplier Device Package | PG-TISON-8 |
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