Technical Specifications of NJX1675PDR2G
| Datasheet |  NJX1675PDR2G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN, PNP |
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| Current - Collector (Ic) (Max) | 3A |
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| Voltage - Collector Emitter Breakdown (Max) | 30V |
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| Vce Saturation (Max) @ Ib, Ic | 115mV @ 200mA, 2A, 170mV @ 200mA, 2A |
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| Current - Collector Cutoff (Max) | 100nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 1A, 2V |
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| Power - Max | 2W |
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| Frequency - Transition | 100MHz, 120MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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| Supplier Device Package | 8-SOIC |
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