Technical Specifications of SGD02N120
| Datasheet |  SGD02N120 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | Infineon Technologies |
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| Series | - |
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| Packaging | Cut Tape (CT) |
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| IGBT Type | NPT |
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| Voltage - Collector Emitter Breakdown (Max) | 1200V |
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| Current - Collector (Ic) (Max) | 6.2A |
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| Current - Collector Pulsed (Icm) | 9.6A |
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| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 2A |
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| Power - Max | 62W |
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| Switching Energy | 220μJ |
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| Input Type | Standard |
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| Gate Charge | 11nC |
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| Td (on/off) @ 25°C | 23ns/260ns |
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| Test Condition | 800V, 2A, 91 Ohm, 15V |
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| Reverse Recovery Time (trr) | - |
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| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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| Mounting Type | Surface Mount |
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| Supplier Device Package | PG-TO252-3 |
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