Technical Specifications of IXSQ20N60B2D1
| Datasheet |  IXSQ20N60B2D1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | IXYS |
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| Series | - |
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| Packaging | Bulk |
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| IGBT Type | PT |
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| Voltage - Collector Emitter Breakdown (Max) | 600V |
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| Current - Collector (Ic) (Max) | 35A |
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| Current - Collector Pulsed (Icm) | - |
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| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 16A |
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| Power - Max | 190W |
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| Switching Energy | 380μJ (off) |
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| Input Type | Standard |
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| Gate Charge | 33nC |
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| Td (on/off) @ 25°C | 30ns/116ns |
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| Test Condition | - |
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| Reverse Recovery Time (trr) | 30ns |
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| Package / Case | TO-3P-3, SC-65-3 |
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| Mounting Type | Through Hole |
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| Supplier Device Package | TO-3P |
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