Technical Specifications of PSMN1R9-40PLQ
Datasheet | PSMN1R9-40PLQ datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | NXP Semiconductors |
Series | - |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
Rds On (Max) @ Id, Vgs | 1.7 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 1mA |
Gate Charge (Qg) @ Vgs | 120nC @ 5V |
Input Capacitance (Ciss) @ Vds | 13200pF @ 25V |
Power - Max | 349W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
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