Technical Specifications of GB10SLT12-220
| Datasheet |  GB10SLT12-220 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Diodes - Rectifiers - Single |
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| Manufacturer | GeneSiC Semiconductor |
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| Series | - |
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| Packaging | Tube |
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| Diode Type | Silicon Carbide Schottky |
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| Voltage - DC Reverse (Vr) (Max) | 1200V (1.2kV) |
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| Current - Average Rectified (Io) | 10A |
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| Voltage - Forward (Vf) (Max) @ If | 1.8V @ 10A |
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| Speed | No Recovery Time > 500mA (Io) |
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| Reverse Recovery Time (trr) | 0ns |
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| Current - Reverse Leakage @ Vr | 40μA @ 1200V |
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| Capacitance @ Vr, F | 520pF @ 1V, 1MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-220-2 |
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| Supplier Device Package | TO-220AC |
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| Operating Temperature - Junction | -55°C ~ 175°C |
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