Technical Specifications of TPC8207(TE12L,Q)
| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Arrays |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| FET Type | 2 N-Channel (Dual) |
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| FET Feature | Logic Level Gate |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 6A |
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| Rds On (Max) @ Id, Vgs | 20 mOhm @ 4.8A, 4V |
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| Vgs(th) (Max) @ Id | 1.2V @ 200μA |
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| Gate Charge (Qg) @ Vgs | 22nC @ 5V |
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| Input Capacitance (Ciss) @ Vds | 2010pF @ 10V |
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| Power - Max | 450mW |
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| Operating Temperature | 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
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| Supplier Device Package | 8-SOP (5.5x6.0) |
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