Technical Specifications of IXDP35N60B
| Datasheet |  IXDP35N60B datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | IXYS |
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| Series | - |
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| Packaging | Tube |
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| IGBT Type | NPT |
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| Voltage - Collector Emitter Breakdown (Max) | 600V |
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| Current - Collector (Ic) (Max) | 60A |
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| Current - Collector Pulsed (Icm) | 70A |
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| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 35A |
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| Power - Max | 250W |
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| Switching Energy | 1.6mJ (on), 800μJ (off) |
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| Input Type | Standard |
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| Gate Charge | 120nC |
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| Td (on/off) @ 25°C | - |
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| Test Condition | 300V, 35A, 10 Ohm, 15V |
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| Reverse Recovery Time (trr) | - |
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| Package / Case | TO-220-3 |
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| Mounting Type | Through Hole |
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| Supplier Device Package | TO-220AB |
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