Technical Specifications of SCT10N120
| Datasheet |  SCT10N120 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | STMicroelectronics |
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| Series | - |
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| Packaging | Tube |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Silicon Carbide (SiC) |
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| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
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| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
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| Rds On (Max) @ Id, Vgs | * |
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| Vgs(th) (Max) @ Id | 3.5V @ 250μA |
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| Gate Charge (Qg) @ Vgs | * |
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| Input Capacitance (Ciss) @ Vds | * |
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| Power - Max | 150W |
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| Operating Temperature | -55°C ~ 200°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | TO-247-3 |
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| Supplier Device Package | HiP247? |
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