Technical Specifications of IPP50N10S3L-16
Datasheet | IPP50N10S3L-16 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | OptiMOS? |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Rds On (Max) @ Id, Vgs | 15.7 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 60μA |
Gate Charge (Qg) @ Vgs | 64nC @ 10V |
Input Capacitance (Ciss) @ Vds | 4180pF @ 25V |
Power - Max | 100W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | PG-TO220-3-1 |
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