Technical Specifications of GDP30P120B
| Category | Discrete Semiconductor Products |
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| Family | Diodes - Rectifiers - Single |
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| Manufacturer | Global Power Technologies Group |
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| Series | Amp+? |
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| Packaging | Tube |
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| Diode Type | Silicon Carbide Schottky |
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| Voltage - DC Reverse (Vr) (Max) | 1200V (1.2kV) |
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| Current - Average Rectified (Io) | 81A |
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| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 30A |
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| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
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| Reverse Recovery Time (trr) | - |
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| Current - Reverse Leakage @ Vr | 100μA @ 1200V |
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| Capacitance @ Vr, F | 1790pF @ 1V, 1MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-247-2 |
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| Supplier Device Package | TO-247-2 |
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| Operating Temperature - Junction | -55°C ~ 135°C |
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