Technical Specifications of IRF1902GPBF
| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Infineon Technologies |
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| Series | HEXFET? |
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| Packaging | Tube |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
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| Rds On (Max) @ Id, Vgs | 85 mOhm @ 4A, 4.5V |
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| Vgs(th) (Max) @ Id | 700mV @ 250μA |
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| Gate Charge (Qg) @ Vgs | 7.5nC @ 4.5V |
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| Input Capacitance (Ciss) @ Vds | 310pF @ 15V |
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| Power - Max | 2.5W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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| Supplier Device Package | 8-SO |
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