Technical Specifications of GWM160-0055P3
| Datasheet |  GWM160-0055P3 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Arrays |
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| Manufacturer | IXYS |
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| Series | - |
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| Packaging | Tube |
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| FET Type | 6 N-Channel (3-Phase Bridge) |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 55V |
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| Current - Continuous Drain (Id) @ 25°C | 160A |
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| Rds On (Max) @ Id, Vgs | 3 mOhm @ 100A, 10V |
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| Vgs(th) (Max) @ Id | 4V @ 1mA |
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| Gate Charge (Qg) @ Vgs | 90nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | - |
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| Power - Max | - |
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| Operating Temperature | -40°C ~ 175°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | ISOPLUS-DIL? |
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| Supplier Device Package | ISOPLUS-DIL? |
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