Technical Specifications of 2SC5876T106Q
| Datasheet |  2SC5876T106Q datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Rohm Semiconductor |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 500mA |
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| Voltage - Collector Emitter Breakdown (Max) | 60V |
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| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
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| Current - Collector Cutoff (Max) | 1μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 50mA, 2V |
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| Power - Max | 200mW |
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| Frequency - Transition | 300MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | SC-70, SOT-323 |
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| Supplier Device Package | UMT3 |
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