Technical Specifications of 1N5831
| Datasheet |  1N5831 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Diodes - Rectifiers - Single |
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| Manufacturer | GeneSiC Semiconductor |
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| Series | - |
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| Packaging | Bulk |
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| Diode Type | Schottky |
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| Voltage - DC Reverse (Vr) (Max) | 35V |
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| Current - Average Rectified (Io) | 25A |
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| Voltage - Forward (Vf) (Max) @ If | 580mV @ 25A |
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| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
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| Reverse Recovery Time (trr) | - |
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| Current - Reverse Leakage @ Vr | 2mA @ 20V |
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| Capacitance @ Vr, F | - |
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| Mounting Type | Chassis, Stud Mount |
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| Package / Case | DO-203AA, DO-4, Stud |
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| Supplier Device Package | DO-4 |
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| Operating Temperature - Junction | -55°C ~ 150°C |
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