Technical Specifications of CSD19538Q2T
| Datasheet |  CSD19538Q2T datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Texas Instruments |
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| Series | NexFET? |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 100V |
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| Current - Continuous Drain (Id) @ 25°C | 13.1A (Tc) |
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| Rds On (Max) @ Id, Vgs | 59 mOhm @ 5A, 10V |
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| Vgs(th) (Max) @ Id | 3.8V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 5.6nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 454pF @ 50V |
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| Power - Max | 2.5W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 6-WDFN Exposed Pad |
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| Supplier Device Package | 6-WSON (2x2) |
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