Technical Specifications of SI3911DV-T1-E3
| Datasheet |  SI3911DV-T1-E3 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Arrays |
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| Manufacturer | Vishay Siliconix |
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| Series | TrenchFET? |
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| Packaging | Cut Tape (CT) |
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| FET Type | 2 P-Channel (Dual) |
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| FET Feature | Logic Level Gate |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 1.8A |
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| Rds On (Max) @ Id, Vgs | 145 mOhm @ 2.2A, 4.5V |
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| Vgs(th) (Max) @ Id | 450mV @ 250μA (Min) |
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| Gate Charge (Qg) @ Vgs | 7.5nC @ 4.5V |
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| Input Capacitance (Ciss) @ Vds | - |
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| Power - Max | 830mW |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
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| Supplier Device Package | 6-TSOP |
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