Technical Specifications of 2SA1182-Y,LF
| Datasheet |  2SA1182-Y,LF datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Cut Tape (CT) |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 500mA |
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| Voltage - Collector Emitter Breakdown (Max) | 30V |
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| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
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| Current - Collector Cutoff (Max) | 100nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 1V |
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| Power - Max | 150mW |
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| Frequency - Transition | 200MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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| Supplier Device Package | S-Mini |
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