Technical Specifications of SI4062DY-T1-GE3
| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Vishay Siliconix |
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| Series | TrenchFET? |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Logic Level Gate |
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| Drain to Source Voltage (Vdss) | 60V |
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| Current - Continuous Drain (Id) @ 25°C | 32.1A (Tc) |
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| Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 20A, 10V |
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| Vgs(th) (Max) @ Id | 2.6V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 60nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 3175pF @ 30V |
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| Power - Max | 7.8W |
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| Operating Temperature | * |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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| Supplier Device Package | 8-SO |
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