Technical Specifications of TRS8E65C,S1Q
| Datasheet |  TRS8E65C,S1Q datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Diodes - Rectifiers - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tube |
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| Diode Type | Silicon Carbide Schottky |
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| Voltage - DC Reverse (Vr) (Max) | 650V |
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| Current - Average Rectified (Io) | 8A (DC) |
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| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 8A |
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| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
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| Reverse Recovery Time (trr) | - |
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| Current - Reverse Leakage @ Vr | 90μA @ 650V |
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| Capacitance @ Vr, F | 44pF @ 650V, 1MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-220-2 |
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| Supplier Device Package | TO-220-2L |
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| Operating Temperature - Junction | 175°C (Max) |
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