Technical Specifications of IRF8252TRPBF-1
Datasheet | IRF8252TRPBF-1 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | HEXFET? |
Packaging | Bulk |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id | 2.35V @ 100μA |
Gate Charge (Qg) @ Vgs | 53nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 5305pF @ 13V |
Power - Max | 2.5W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
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