Technical Specifications of TPN1110ENH,L1Q
| Datasheet |  TPN1110ENH,L1Q datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 200V |
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| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) |
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| Rds On (Max) @ Id, Vgs | 114 mOhm @ 3.6A, 10V |
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| Vgs(th) (Max) @ Id | 4V @ 200μA |
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| Gate Charge (Qg) @ Vgs | 7nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 600pF @ 100V |
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| Power - Max | 39W |
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| Operating Temperature | 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-PowerVDFN |
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| Supplier Device Package | 8-TSON Advance |
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