Technical Specifications of IXDN602SI
| Datasheet |  IXDN602SI datasheet |
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| Category | Integrated Circuits (ICs) |
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| Family | PMIC - Gate Drivers |
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| Manufacturer | IXYS Integrated Circuits Division |
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| Series | - |
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| Packaging | Tube |
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| Part Status | Active |
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| Driven Configuration | Low-Side |
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| Channel Type | Independent |
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| Number of Drivers | 2 |
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| Gate Type | IGBT, N-Channel, P-Channel MOSFET |
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| Voltage - Supply | 4.5 V ~ 35 V |
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| Logic Voltage - VIL, VIH | 0.8V, 3V |
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| Current - Peak Output (Source, Sink) | 2A, 2A |
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| Input Type | Non-Inverting |
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| High Side Voltage - Max (Bootstrap) | - |
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| Rise / Fall Time (Typ) | 7.5ns, 6.5ns |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
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| Supplier Device Package | 8-SOIC-EP |
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