Technical Specifications of TH58BYG2S3HBAI6
| Category | Integrated Circuits (ICs) |
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| Family | Memory |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | Benand? |
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| Packaging | Tray |
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| Part Status | Active |
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| Format - Memory | EEPROMs - Serial |
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| Memory Type | EEPROM - NAND |
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| Memory Size | 4G (512M x 8) |
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| Speed | 25ns |
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| Interface | Parallel |
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| Voltage - Supply | 1.7 V ~ 1.95 V |
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| Operating Temperature | -40°C ~ 85°C (TA) |
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| Package / Case | 67-VFBGA |
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| Supplier Device Package | 67-VFBGA (6.5x8) |
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