Technical Specifications of HN1B04FU-GR,LF
| Datasheet | HN1B04FU-GR,LF datasheet |
| Category | Discrete Semiconductor Products |
| Family | Transistors - Bipolar (BJT) - Arrays |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Transistor Type | NPN, PNP |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Power - Max | 200mW |
| Frequency - Transition | 150MHz |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | US6 |
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