Technical Specifications of DSS45160FDB-7
| Datasheet |  DSS45160FDB-7 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | Diodes Incorporated |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN, PNP |
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| Current - Collector (Ic) (Max) | 1A |
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| Voltage - Collector Emitter Breakdown (Max) | 60V |
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| Vce Saturation (Max) @ Ib, Ic | 240mV @ 50mA, 1A / 550mV @ 50mA, 1A |
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| Current - Collector Cutoff (Max) | 100nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 500mA, 2V / 120 @ 500mA, 2V |
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| Power - Max | 405mW |
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| Frequency - Transition | 175MHz, 65MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | 6-UDFN Exposed Pad |
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| Supplier Device Package | U-DFN2020-6 |
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