Start With
Include WithHome > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Arrays > HN3C51F-GR(TE85L,F
HN3C51F-GR(TE85L,F
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
| Manufacturer Part Number | HN3C51F-GR(TE85L,F |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | TRANS 2NPN 120V 0.1A SM6 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| HN3C51F-GR(TE85L,F Price |  |
Technical Specifications of HN3C51F-GR(TE85L,F
| Category | Discrete Semiconductor Products |
|---|---|
| Family | Transistors - Bipolar (BJT) - Arrays |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Transistor Type | 2 NPN (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Power - Max | 300mW |
| Frequency - Transition | 100MHz |
| Mounting Type | Surface Mount |
| Package / Case | SC-74, SOT-457 |
| Supplier Device Package | SM6 |
