Technical Specifications of BFG10W/X,115
| Datasheet |  BFG10W/X,115 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | NXP Semiconductors |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 10V |
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| Frequency - Transition | 1.9GHz |
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| Noise Figure (dB Typ @ f) | - |
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| Gain | - |
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| Power - Max | 400mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 50mA, 5V |
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| Current - Collector (Ic) (Max) | 250mA |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-343 Reverse Pinning |
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| Supplier Device Package | 4-SO |
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