Technical Specifications of PBHV8515QAZ
| Datasheet |  PBHV8515QAZ datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | NXP Semiconductors |
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| Series | Automotive, AEC-Q101 |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 500mA |
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| Voltage - Collector Emitter Breakdown (Max) | 150V |
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| Vce Saturation (Max) @ Ib, Ic | 60mV @ 5mA, 50mA |
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| Current - Collector Cutoff (Max) | 100nA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 200mA, 10V |
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| Power - Max | 325mW |
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| Frequency - Transition | 75MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | 3-XDFN Exposed Pad |
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| Supplier Device Package | DFN1010D-3 |
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