Technical Specifications of MJD112-1G
| Datasheet |  MJD112-1G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | NPN - Darlington |
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| Current - Collector (Ic) (Max) | 2A |
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| Voltage - Collector Emitter Breakdown (Max) | 100V |
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| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
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| Current - Collector Cutoff (Max) | 20μA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
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| Power - Max | 1.75W |
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| Frequency - Transition | 25MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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| Supplier Device Package | I-Pak |
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