Technical Specifications of 2SA1943-O(Q)
| Category | Discrete Semiconductor Products |
| Family | Transistors - Bipolar (BJT) - Single |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Packaging | Tube |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 15A |
| Voltage - Collector Emitter Breakdown (Max) | 230V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Current - Collector Cutoff (Max) | 5μA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V |
| Power - Max | 150W |
| Frequency - Transition | 30MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-3PL |
| Supplier Device Package | TO-3P(L) |
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